Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors

摘要

CdZnTe crystals for the preparation of X-ray imaging detectors have been grown by the boron oxide encapsulated vertical Bridgman method. The homogeneity of the crystals has been studied by photoluminescence mapping, energy-dispersive X-ray analysis, and resistivity mapping. The zinc distribution follows an anomalous behavior that deviates from the normal freezing equation. The wafers cut perpendicular to the growth direction show a homogeneous resistivity distribution, suggesting the possible exploitation of these crystals for the production of large volume imaging detectors.