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Characterization of indirect X-ray imaging detector based on nanocrystalline gadolinium oxide scintillators for high-resolution imaging application

机译:基于纳米晶氧化oxide闪烁体的间接X射线成像探测器的表征,用于高分辨率成像应用

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摘要

Nanocrystalline Gd_2O_3:Eu scintillating powders were successfully synthesized through a co-precipitation process for X-ray imaging detector applications. In this work, as-synthesized sample was further calcinated at different temperature, time with 1-10 h and doped-Eu~(3+) concentration with 1-10 mol% in the electrical furnace. The characterization such as the crystal structures and microstructure of Gd_2O_3:Eu scintillator were measured by XRD and SEM experiment. The phase transition from cubic to monoclinic structure was observed at 1300℃ calcination temperature. Dominant emission peak of sample with cubic structure was appeared at 611 nm under 266 nm UV light excitation. After scintillation properties of synthesized Gd_2O_3:Eu scintillator were investigated, Gd_2O_3:Eu scintillating films with different thickness was fabricated onto glass substrate by a screen printing method. And then X-ray imaging performance in terms of the light response to X-ray exposure dose, signal-to-noise ratio (SNR) and spatial resolution were measured by combining the fabricated Gd_2O_3:Eu screen films with a lens-coupled CCD imaging detector under radiographic system conditions.
机译:通过共沉淀过程成功地合成了纳米晶Gd_2O_3:Eu闪烁粉体,用于X射线成像检测器应用。在这项工作中,在电炉中将合成后的样品在不同的温度,时间下分别煅烧1-10 h,并掺杂1-mol%的Eu-(3+)浓度。通过XRD和SEM实验对Gd_2O_3:Eu闪烁体的晶体结构和微观结构进行了表征。在1300℃的煅烧温度下观察到从立方到单斜晶结构的相变。在266 nm的紫外光激发下,立方结构样品的主要发射峰出现在611 nm处。在研究了合成的Gd_2O_3:Eu闪烁体的闪烁特性后,通过丝网印刷法在玻璃基板上制备了不同厚度的Gd_2O_3:Eu闪烁体薄膜。然后,通过将制造的Gd_2O_3:Eu屏幕膜与透镜耦合CCD成像相结合,测量在X射线成像剂量,对信噪比(SNR)和空间分辨率方面的光响应性能。射线照相系统条件下的探测器。

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