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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium
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Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium

机译:基于COTS CMOS成像器和包含Ga的转换层的热中子探测器

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摘要

In this work we will introduce a novel low cost position sensitive thermal neutron detection technique, based on a Commercial Off The Shelf CMOS image sensor covered with a Gadolinium containing conversion layer. The feasibility of the neutron detection technique implemented in this work has been experimentally demonstrated. A thermal neutron detection efficiency of 11.3% has been experimentally obtained with a conversion layer of 11.6μm. It was experimentally verified that the thermal neutron detection efficiency of this technique is independent on the intensity of the incident thermal neutron flux, which was confirmed for conversion layers of different thicknesses. Based on the experimental results, a spatial resolution better than 25μm is expected. This spatial resolution makes the proposed technique specially useful for neutron beam characterization, neutron beam dosimetry, high resolution neutron imaging, and several neutron scattering techniques.
机译:在这项工作中,我们将基于覆盖了含d转换层的商用现货CMOS图像传感器,介绍一种新颖的低成本位置敏感热中子检测技术。实验证明了这项工作中实施的中子探测技术的可行性。通过转换层为11.6μm的实验获得的热中子探测效率为11.3%。实验证明,该技术的热中子探测效率与入射的热中子通量强度无关,这一点已被不同厚度的转换层所证实。根据实验结果,预计空间分辨率将优于25μm。这种空间分辨率使所提出的技术特别适用于中子束表征,中子束剂量测定,高分辨率中子成像和几种中子散射技术。

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