Performance of new radiation-tolerant thin planar and 3D columnar n~+ on p silicon pixel sensors up to a maximum fluence of ~ 5 × 10~(15) n_(eq)/cm~2

摘要

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few 10~(16) n_(eq)/cm~2 at ～ 3 cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n~+ on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100 μm or 130 urn, that of 3D sensors 130 μm. First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. First results on their performance before and after irradiation up to a maximum fluence of ～ 5 × 10~(15) n_(eq)/cm~2 are reported in this article.