A new method for directly locating single-event latchups using silicon pixel sensors in a gas detector

摘要

Single-event latchups (SELs) are easily triggered when high-energy heavy ions attack the sensitive parts of integrated circuits (ICs). The main strategy to improve the ability of ICs to resist SELs is to thoroughly evaluate the sensitivities of all parts, which requires that the SEL be located with high accuracy. We have proposed a method of using silicon pixel sensors as the positioning chips to track single heavy ions and obtain the hit points attacked on an IC through analysis of ion tracks. The method can locate SELs and obtain a distribution map of sensitive parts with high accuracy. In this paper, we present the first image of a single heavy ion in our prototype detector using Topmetal-II~ sensors as the positioning chips. The test results show that the detector can locate heavy ions with a position resolution better than 7 μm and angular resolution better than 0.3°. The maximum measurable flux of the heavy ion beam can reach 10~5 ions/(cm~2 • s) in future if a high-readout rate positioning chip is adopted.