An innovative radiation hardened CAM architecture

摘要

An innovative Content Addressable Memory (CAM) cell with radiation hardened (RH) architecture is presented. The RH-CAM is designed using a commercial 28 nm CMOS technology. The circuit has been simulated in worst-case conditions, and the effects due to single particles have been analyzed by injecting a current pulse into a circuit node. The proposed architecture is suitable for real-time pattern recognition tasks in harsh environments, such as front-end electronics in the ATLAS experiment at the Large Hadron Collider (LHC) and in space applications.