Detector performance and defect densities in CdZnTe after two-step annealing

摘要

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200-220 C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.