Study of Changes in the Current-Voltage Characteristics of a Semiconductor Diode When Powerful High-Frequency Signals Pass Through It

摘要

—An experimental stand has been created to assess the characteristics of the electromagnetic field under which the current–voltage ( I – V ) characteristic of semiconductor elements change. The developed stand was used for a series of experiments on the effect of signals with different parameters on a KD520A diode in order to record changes in the slope of the diode’s I – V characteristic as an onset degradation feature of the p – n -junction. This is done by recording the amplitudes of higher harmonics under the action of microwave signals.