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Solid State Storage That's Built for Speed

机译:专为速度打造的固态存储

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After years of the status quo in solid state storage, recent advancements may bring about replacements for conventional hard drives in about five years. One solid state technology, flash memory, has two big weaknesses: It wears out after a relatively small number of writes, and it's slow compared with other types of memory. Future generations of solid state technologies, such as MRAM (magnetoresistive RAM) and phase-change memory, don't have these limitations. Freescale's commercial MRAM chip is the first of its kind on the market and operates at 4 Mbps. MRAM combines an unlimited write potential and high speed with flash RAM's nonvolatile nature.
机译:在固态存储中保持多年的现状之后,最近的进展可能会在大约五年内带来对传统硬盘驱动器的替换。闪存是一种固态技术,它有两个很大的弱点:相对较少的写入次数后便磨损了,并且与其他类型的存储器相比速度较慢。下一代固态技术,例如MRAM(磁阻RAM)和相变存储器,没有这些限制。飞思卡尔的商用MRAM芯片是市场上同类产品中的第一款,其工作速率为4 Mbps。 MRAM将无限的写入潜力和高速与闪存RAM的非易失性相结合。

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