机译:GaN / NbN外延半导体/超导体异质结构
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;
Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA;
Univ Notre Dame, Dept Elect Engn, Indiana, PA 46556 USA;
US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA;
US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA;
US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA;
Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
机译:出版商注:二维外延超导体-半导体异质结构:拓扑超导网络的平台[Phys。 B 93,155402(2016)版]
机译:二维外延超导体-半导体异质结构:拓扑超导网络的平台
机译:二维外延超导体-半导体异质结构:拓扑超导网络的平台(vol 93,155402,2016)
机译:在蓝宝石上生长的外延超薄NbN薄膜专用于超导混合器
机译:用于节能半导体器件的Si / GaN异质结构的GaN和界面工程的表面工程
机译:III型氮化物半导体中II型能带对准的证据:In0.17Al0.83N / GaN异质结构的实验和理论研究
机译:外延NBN / GaN超导体/半导体异质结中的动量分辨的电子带结构和偏移
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管