Molecular-Beam Epitaxy and Device Applications Of III-V Semiconductor Nanowires

摘要

A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the "roadmap" for the Si ultralarge- scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010.