Thermodynamic Calculations as the Basis for CVD Production of Silicide Coatings

摘要

In 1999, our current objectives in CVD modeling focus on establishing the con- nection between quantifiable film proper- ties (including growth rate, composition, and microstructure) and deposition pa- rameters (activation method [e.g., plasma], substrate temperature, pressure, gas-phase composition and flow rate, and reactor ge- ometry). These processes can be grouped into two classes: (1) reactions controlled by gas-phase diffusion, represented by equilibrium at the gas/solid interface; and (2) reactions controlled by kinetics.