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机译:使用带IMD3消除的并联组合晶体管的线性InGaP / GaAs HBT功率放大器
Department of Electronic Engineering and PNU-LG Electronics Smart Control Center, Pusan National University, Busan, South Korea;
Department of Electronic Engineering and PNU-LG Electronics Smart Control Center, Pusan National University, Busan, South Korea;
Department of Electronic Engineering and PNU-LG Electronics Smart Control Center, Pusan National University, Busan, South Korea;
Mobile RF Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon, South Korea;
Mobile RF Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon, South Korea;
Mobile RF Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon, South Korea;
Department of Electronic Engineering and PNU-LG Electronics Smart Control Center, Pusan National University, Busan, South Korea;
Heterojunction bipolar transistors; Power generation; Linearity; Semiconductor device measurement; Resistors; Power amplifiers; Gallium arsenide;
机译:用于W-CDMA的InGaP / GaAs HBT两级功率放大器MMIC中的互调抵消来增强PAE
机译:用于W-CDMA的InGaP / GaAs HBT两级功率放大器MMIC中的互调抵消来增强PAE
机译:用于W-CDMA的InGaP / GaAs HBT两级功率放大器MMIC中的互调抵消来增强PAE
机译:用于W-CDMA的InGaP / GaAs HBT两级功率放大器MMIC中的互调抵消来增强PAE
机译:GaAs FET微带放大器的线性化技术,采用导数对消技术。
机译:用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器
机译:InGaP / GaAs / AlGaAs功率DHBT在饱和区附近具有增强的线性