D-Band Broadband Passive Frequency Tripler Using Antiparallel Diode-Connected nMOS Transistor Pair in 22-nm CMOS SOI

摘要

This letter describes a D-band antiparallel diode-connected nMOS-transistor-pair frequency tripler that is capable of operating over 27.8% 5-dB bandwidth (from 93 to 123 GHz) and achieves -16-dBm output power. The back-gate voltage is used to control the nonlinearity of the nMOS devices and can he tuned to optimize output power and conversion loss, for a range of input power levels. The tripler is implemented in the 22-nm CMOS SOI process and avoids the use of Schottky diodes.