Low power & high gain differential amplifier using 16 nm FinFET

摘要

A low noise, two-stage differential operational amplifiers are designed in 16nm FinFET technology are presented. The proposed design would be applied in high-speed system on chips (SOCs). The low leakage current, low power dissipation and high current driving abilities of the FinFET are taken into realization with a basic analog building block of OPAMP. In this proposed design dynamic biasing technique is used for enhancing the slew rate of the OPAMP. The input common mode range (ICMR) can be increased and the gain stability is improved by this technique. The performance of a differential amplifier is analyzed using mixed mode device and circuit simulation on FinFET in sub-16-nm node technologies. It observed that by using the FinFET based OPAMP has common mode rejection ratio is 76 dB with improved performance regarding the area, power, and bandwidth. The proposed design has less 1/f noise and better performance that can replace conventional MOSFET in low power Nano circuits. (C) 2019 Elsevier B.V. All rights reserved.