DEPENDENCY OF Ⅳ CHARACTERISTICS OF A MESFET DEVICE ON FREQUENCY AND ELECTRIC FIELD

摘要

A new automated system for observing the dependence of the Ⅳ characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse Ⅰ/Ⅴ measurement system. The results provide a clearer picture of the effects of these variables on the Ⅳ characteristics and show that these dependencies can be incorporated in the mobility figure for the device.