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SAME TRANSISTORS,NEW NAMES: Foundries Rename Nodes to Disguise Lack of Progress

机译:相同的晶体管,新名称:Foundries重命名节点以伪装缺乏进展

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Intel's plan to stop using nanometers to identify its transistor nodes symbolizes the problem facing all leading-edge foundries. Despite the best efforts of process engineers, Moore's Law is hitting the proverbial wall. Accurate labels based on nanometers would clearly show the lack of progress in shrinking transistors. That leaves foundries with two choices: lie using nanometers, or lie without nanometers. For the last few generations, TSMC has chosen the former. Back in the day, we labeled IC processes using the contacted-gate pitch, which is the distance between closely packed transistors. Because this distance (measured in nanometers) is linear, die area scaled with the square of the pitch. To achieve the Moore-prescribed goal of doubling transistor density, the gate pitch dropped by about 30% in each node: for example, 40nm to 28nm.
机译:英特尔计划停止使用纳米来识别其晶体管节点象征着所有领先的铸造件面临的问题。 尽管流程工程师的最佳努力,但摩尔的法律正在击中众所周知的墙壁。 基于纳米的准确标签将清楚地显示缩减晶体管的进展情况。 留下两种选择的果实:使用纳米躺着,或者没有纳米。 对于最后几代,TSMC选择了前者。 回到白天,我们使用接触栅极间距标记IC流程,这是紧密堆叠的晶体管之间的距离。 因为该距离(在纳米中测量)是线性的,所以模具区域与间距的平方缩放。 为了实现旋转晶体管密度的摩尔规定目标,栅极间距在每个节点中下降约30%:例如,40nm至28nm。

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