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首页> 外文期刊>Microelectronics & Reliability >Characterization of NH_3 plasma-treated Ba_0.7Sr_0.3TiO_3 thin films
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Characterization of NH_3 plasma-treated Ba_0.7Sr_0.3TiO_3 thin films

机译:NH_3等离子体处理的Ba_0.7Sr_0.3TiO_3薄膜的表征

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摘要

The effects of plasma surface treatment, using NH_3 gas, of Ba_0.7Sr_0.3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the nonplasma-treated sample at an applied voltage f 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH_3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant.
机译:研究了使用NH_3气体对Ba_0.7Sr_0.3(BST)膜进行等离子体表面处理对Pt / BST / Pt电容器的泄漏和介电特性的影响。由于BST暴露于等离子体,与在施加电压f 1.5 V时未经等离子体处理的样品相比,BST电容器的泄漏电流密度可以提高三个数量级。原子力显微镜发现,NH_3等离子体也改变了BST的形态。通过X射线光电子能谱检查,在经等离子体处理的样品中观察到N 1 s峰的存在。它会引起额外的空间电荷,并导致介电常数降低。

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