Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures

摘要

This article deals with the influence of the polycrystalline gate residual stress on the electrical properties of the corresponding metal/polysilicon/oxide/silicon capacitive structures. The flat band voltage V_fb and the oxide charge density N_ox, are shown to depend on the polysilicon residual stress. On real influence is obtained for the dielectric breakdown properties. These results demonstrate that the dielectric improvement obtained for (nitrogen doped or undoped) silicon gates deposite from disilane does not depend on the film mechanical properties bout on other intrinsic properties such as microstructure or roughness.