Reliability of ultra-thin N_O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres

摘要

Oxide reliability of oxynitrides with thickness between 3.6 and 2.6 nm was investigated. The oxynitrides were grown at reduced pressure in gas atmospheres containing different ratios of N_2O and O_2 concentrations. The concentrations of the nitrogen incorporated into the oxide were found to be dependent on both, oxidation pressure and oxidation ambience. Further, reliability tests revealed that the nitrogen concentration, which is beneficial to oxide reliability, shows a strong dependence on oxide thickness.