Reversible and irreversible interface trap centres generated at high electric fields in MOS structures

摘要

In this work, we present results of the study of interface trap generation processes at the Si-SiO_2 interface in MOSFET structures caused by high oxide field stress. Change sin areal density and energy distribution in the Si band gap of the interface traps were monitored using the II-level conventional charge pumping technique. The generated interface traps were divided into two types: reversible and irreversible in relation to their discharge by low field electron injection. a broad presentation of changes in density and energy distribution of the interface traps was included. The threshold value of oxide field for interface trap generation was obtained.