Internal photoemission in the MOS system at low electric fields in the dielectric. Model and applications

摘要

A new model of photoelectric phenomena taking place in the MOS system, at low electric fields in the dielectric layer, is outlined in this article. Solutions of model equations are discussed and compared with the results of experimental investigations. Excellent agreement between the characteristics predicted by the model and the experimental characteristics, strongly supports the validity of the model. Highly precise, new photoelectric measurement methods based on this model are being developed. One of these methods, a method to measure the effective contact potential difference in MOS structures (the Φ_MS factor), has already been fully verified and shown to be the most accurate of the existing methods for determination of this parameter. The other method, outlined in this article, is the method of determination of the trapping properties of the MSO structure dialectic, which is currently being optimized and verified experimentally.