Interface properties of the Si(100)-SiO_2 system formed by rapid thermal oxidation

摘要

In this work, the properties f the Si(100)-SiO_2 interface are examined directly following wet and dry rapid thermal oxidation (RTO) at 1000-1100degC. The high frequency and quasi-static CV response of the Si(100)-SiO_2 system are measured using a mercury probe method. The analysis indicates a high interface state density across the band gap for dry oxidation, with a characteristic peak in the range 0.8-0.9 eV above the valence band edge. These interface state profiles are compared to polysilicon/oxide/Si(100)) structures, measured after rapid thermal annealing at 1050 deg C (where the gate oxide is grown by conventional furnace oxidation). The results show a striking similarity, pointing to a common origin for the interfacial defects. Steam-assisted RTO samples do not reveal these peaks, and the reasons for this are presented. The significance of these new results to thin oxide growth and optimization by RTO are discussed.