Annealing effects in the PECVD SiO_2 thin films deposited using TEOS, Ar and O_2 mixture

摘要

In this work, we present the results obtained on the characterization of silicon oxide thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using a mixture of tetraethylorthosicicate (TEOS), oxygen and argon. The electrical characteristics of the implemented MOS capacitors, after the annealing process (600degC), showed an increase in the break-down strength as well as the effective charge density.