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Processing induced material interactions determining the reliability of LTCC multichip modules

机译:处理诱导的材料相互作用决定了LTCC多芯片模块的可靠性

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摘要

Metals can exhibit dendritic short-circuit growth caused by electrochemical migration in conductor-insulator structures, which may result in failures and reliability problems in microcircuits. The classical model of electrochemical migration has been well known for several decades. This process is a transport of metal ions between two metallization stripes under bias through a continuous aqueous electrolyte. Due to the electrochemical deposition at the cathode, dendrites and dendrite-like deposits are formed. Ultimately, such a deposit can lead to a short circuit in the device and can cause catastrophic failure. Recent investigations have demonstrated that no only metallic components, but also oxides from the isolating layers can take part in the formation of migrated shorts, after a chemical reduction process. Material design aspects need to clarify the correlation between material composition, processing, chemicla bonding state, and electrochemicla migration failure rate in isolating compounds: this is the scope of the present study.
机译:金属可能会由于导体-绝缘体结构中的电化学迁移而引起树枝状短路增长,这可能导致微电路出现故障和可靠性问题。几十年来,电化学迁移的经典模型是众所周知的。该过程是在偏压下通过连续的水性电解质在两个金属化条之间传输金属离子。由于在阴极的电化学沉积,形成了树枝状和类树状沉积物。最终,这种沉积会导致设备短路,并导致灾难性故障。最近的研究表明,在化学还原过程之后,不仅金属成分,而且隔离层中的氧化物也可以参与迁移的短路的形成。材料设计方面需要澄清分离化合物中材料组成,加工,化学键合状态和电化学迁移失败率之间的相关性:这是本研究的范围。

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