Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gatecoupling behaviour

摘要

A novel modular strategy for highly flexible modeling fo ESD-capable MOS compact models is introduced. This high current MOS model comprises the important gate-coupling effect and an approximated formulation for the avalanche multiplication factor. This enormously enhances the computation stability and performance of the model. An easy but accurate parameter extraction procedure based upon the model equations is described. measurement and simulation of an application example employing the new ESD-model within a CMOS output driver exhibit the relevance of dynamic gate-coupling for the ESD-reliabiltiy of the circuit.