Analysis of retention tail distribution induced by scaled shallow trench isolation for high density DRAMs

摘要

The transistor hump induced by shallow trench isolation (STI) was quantitatively analyzed at the test site of DRAM product wafers, and it was directly correlated to the retention fail-bit distribution of the DRAMs. It was found that the hump magnitude tracks quite well the tail distribution of retention time failure, thus establishing a direct link between the hump magnitude estimated from the test transistors and the retention time distribution of the product.