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Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges

机译:静电放电下GGNMOS和LVTSCR保护单元的仿真和实验比较

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摘要

To assess the capabilities of the device simulation tool in the field of ElectroStatic Discharges (ESD), two protection structures were studied : a Grounded Gate NMOS transistor (GGNMOS) and a Low Voltage Threshold Silicon Controlled Rectifier (LVTSCR). Both compounds were tested with the Transmission Line Pulse test method and simulated with the software Dessis-ISE. Hence, checking the behaviour of each device in terms of ESD has been possible.
机译:为了评估设备仿真工具在静电放电(ESD)领域的能力,研究了两种保护结构:接地栅极NMOS晶体管(GGNMOS)和低压阈值可控硅整流器(LVTSCR)。两种化合物均使用传输线脉冲测试方法进行了测试,并使用Dessis-ISE软件进行了仿真。因此,可以检查每个设备在ESD方面的行为。

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