E1ectrical probing of deep sub-micron integrated circuits using scanning probes

摘要

A new scanning probe microscopy technique for contact electrical probing of deep sub-micron integrated circuits is presented. The probe utilizes a conductive atomic force microscope micromachined tip to simultaneously measure nanometer resolution surface topography and acquire real-time high frequency electrical signals. Similar to conven- tional wire probers, the probe operates on a standard probe station in an ambient environment. The probe is capable of surface imaging and placement on features as small as 0.18 μm and is able to control and maintain a contact force to < 1 μN, thus minimizing circuit damage. Electronics, integrated within the probe tip, enable 3 GHz bandwidth measure- ments with a capacitive loading of <120 fF. Measurements of 0.25 pm interconnect structures and polished silicon on insulator devices is presented.