The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

摘要

The influence of the gate electrode p-polysilicon doping concentration on gate oxide breakdown data is investigated. It is shown that a small variation in doping concentration of-p-doped polysilicon gates as well as an inversion layer in p- Polysilicon gate strongly affects the results, if MPMOS devices are stressed in inversion biasing mode by applying a Constant current stress.