Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly

摘要

With the trends in integrated circuit (IC0 feature scaling, it is inevitable to make transition to the conductor material with lower electrical resistance and dielectric material with lower dielectric constant (low -k). The objective of this study is to address the wire bonding impact on advanced Copper (Cu)/low-k interconnection and their reliability performance. This paper reports reliable wire bonding process optimization for Cu/low-k chip structure, oxide cleaning process for Cu metallization before wire bonding, decapping process for failure analysis of Cu devices and reliability results of Cu/low k device.