Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse

摘要

The aim of this study is to propose a failure mode analysis of a grounded gate nMOS transistor under high current pulse according to TLP stress. The experimental values are compared with numerical results issued of 3D simulation. EMMI views are correlated with physical extractions for failure mode analysis during this electrical stress. Thus, it Appears that the thermal distribution is inhomogeneously established.