Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis

摘要

While the mass production of CMOS transistor technology in Integrated Circuits achieves the 180-nm and lowers sizes, confident device failure analysis process requires all electrical characteristics measurement of single transistor in the die internal circuitry. This paper reports experimental results of a 4 tips-0.2 micron probing technique in the Nice Device Failure Analysis Laboratory (NDAL) during the threshold voltage/BVDSS measurement of single transistor and forward/reverse current leakage measurement of single junction in complex gates of current integrated circuits.