Evaluation methodology of thin dielectrics for non-volatile memory application

摘要

The quality of active dielectrics and in particular of tunnel oxide has a strong impact on Flash memory yield and reliability. For this reason, major efforts are required to improve active oxide characterisation methodology. A monitor of extrinsic defects and local dielectric thinning is crucial to improve device yield and tighten threshold Distributions. Besides, deeper characterizations are necessary for correlating device and simple structures intrinsic Degradation during cycling. This is mostly important when introducing new fabrication process steps.