Invesstigation of dynamic disturbance quantities in piezoresistive silicon sensors

摘要

This paper presents the investigation of dynamic disturbance quantities in piezoresistive semiconductor sensors for the purpose of a better understanding of the measurement uncertainties. For the two generic sources of piezoresistive silicon sensor instability, e. g. mechanical and electrical effects, the investigation is focused on the electrical source. The results show that the major part of noise at low frequency region is generated inside the passivation layers. Mobile protons are found to play an important role in causing instabilities of sensors in humid environment.