Investigation of Sensitivity Improvement on Passive Voltage Contrast for Defect Isolation

摘要

With the increasing complexity of process technology, device features are now down to the deep-submicron range and the number of metal layers has increased to as many as 9 layers. At the same time, fiilure analysis (FA) has become significantly more difficult, especially fault localization. Many localization tools such as EMMI (combined with Mercury Cadmium Telluride detector), LIVA, TIVA, SEI, OBIRCH, OBIC...etc. are not always precise enough by themselves to pin Point defects. However, combining these techniques with layout tracing and passive voltage contrast (PVC) can improve the Accuracy of defect isolation and increase the FA hit rate greatly.