A review of recent MOSFET threshold voltage extraction methods

摘要

The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be ex- tracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics.