An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation

摘要

A compact analytical model for MOSFET channel-length modulation (CLM) based on momentum and energy-conservation of Boltzmann transport equation as well as quasi-2D formulation is presented. It is consistent with the generalized drift-diffusion formulation including the nonlocal electron temperature, which can be interpreted as being an effective CLM or effective velocity overshoot. The model has a simple familiar form of the "pinch-off" model, with one fitting parameter for the length- and bias-dependent effective saturation field and effective Early voltage. The model can be easily characterized with one measured I_(ds)-V_(ds) data and has been verified with submicron technology data for the full range of gate lengths and bias conditions.