首页> 外文期刊>Microelectronics & Reliability >Integrated process capability analysis with an application in backlight module
【24h】

Integrated process capability analysis with an application in backlight module

机译:集成处理能力分析及其在背光模块中的应用

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Backlight application specializes in supplying light, with notable examples including liquid crystal display (LCD), hand-phone LCD, and PDA LCD. The integrated process capability and integrated process yield for cold cathode fluorescent lamp backlight are unknown. Process capability analysis is a highly effective means of assessing the process ability of backlight that meets specifications. A larger process capability index (PCI) implies a higher process yield, and lower expected process loss. Chen et al. [Int. J. Product. Res. 39 (2001) 4077], applied indices C_(pu), C_(pl), and C_(pk) to evaluate the integrated process capability for a multi-process product with smaller-the-better, larger-the-better, and nominal-the-best specifications, respectively. However, C_(pk) suffers from the weakness of being unable to reflect the specific process yield. This study selects index C_(ps) to replace C_(pk). Meanwhile, an integrated PCI for the entire backlight module is proposed, and the relationship between the PCI and process yield is described. A multi-process capability analysis chart, which reasonably accurately indicates the status of process capability for the backlight module, is designed for practical applications.
机译:背光应用程序专门用于提供光源,主要示例包括液晶显示器(LCD),手机LCD和PDA LCD。冷阴极荧光灯背光源的集成处理能力和集成处理良率尚不清楚。工艺能力分析是评估符合规格的背光的工艺能力的高效方法。更大的过程能力指数(PCI)意味着更高的过程良率和更低的预期过程损失。 Chen等。 [Int。 J.产品。 Res。 39(2001)4077],应用索引C_(pu),C_(pl)和C_(pk)来评估具有更好,更小和更好的多过程产品的集成过程能力。标称最佳规格。但是,C_(pk)的缺点是无法反映特定的工艺产量。本研究选择索引C_(ps)代替C_(pk)。同时,提出了用于整个背光模块的集成PCI,并描述了PCI与工艺良率之间的关系。专为实际应用而设计的多工艺能力分析图,可以合理地准确指示背光模块的工艺能力状态。

著录项

  • 来源
    《Microelectronics & Reliability》 |2002年第12期|p.2009-2014|共6页
  • 作者

    M.L. Huang; K.S. Chen; Y.H. Hung;

  • 作者单位

    Department of Industrial Engineering and Management, National Chin-Yi Institute of Technology, 35, Lane 215, Sec. 1, Chung san Rd, Taiping, Taichung 411, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号