Wibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction

摘要

Subthreshold gate voltage shift ΔV_gw of n-MOSFET's with different oxide thicknesses aging at various stress con- ditions was statisticalized using Weibull distribution. Based on the statistical results, an empirical expression for the relationship between average lifetime and acceleration field was developed, and lifetime predictions were made. Results show that the shape factors (β) of intrinsic failure of the devices with 5.0, 7.0, and 9.0 nm gate oxides under 27 and 105 deg.C are the same, namely, the mechanisms of the intrinsic failure are the same under low and high temperatures.