MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

摘要

The growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N_2O-grown, N_2O- Annealed and N-2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all The samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO_2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in No has the advantage of providing higher nitrogen accumulation at the SiO_2/SiC interface and in the oxide bulk than The other growth techniques.