1/f noise as a reliability indicator for subsurface Zener diodes

摘要

It is shown from accelerated life tests and noise measurements that the degradation in reference volage for sub- surface Zener diodes is strongly correlated with 1/f noise in the devices. The larger the initial 1/f noise of a diode is, the earlier its degradation occurs. Compared with dc parameters, 1/f noise is more sensitive to the slight change in the structure of the devices subjected to operation or test stresses. In the mechanism analysis, the degradation and the 1/f noise are attributed to similar physical origin, and both are related to dislocations in the space-charge region of p-n junction. Based on the results, a 1/f noise screening approach is proposed for the high reliability application of the devices.