A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO_2 and nitride-oxide dielectrics

摘要

The results of an investigation of time-dependent dielectric breakdown (TDDB) of thin gate oxide and nitride-oxide (N-O) films are presented for a wide range of fields and temperatures. It was found that TDDB of both gate oxide and N-O films followed a power-law dependence of mean value (I_avg) of average leakage current (I_avg). An empirical ex- Trapolation model using average leakage current as a major parameter was proposed based on experimental results. This proposed (I_avg) lifetime model has been successful to predict dielectric reliability.