A review of ULSI failure analysis techniques for DRAMs 1. defect localization an verification

摘要

In this paper defect localization and verification procedures for ULSI DRAMs are described. The analytical process can be grouped into three subsequent phases: component based, die based and local techniques. Beinning with non- destructive localization methods on component level, such as X-ray and scanning acoustic microscopy (SAM), subse- quent depackaging of the component enables more extensive electrical probing and physical defect localization at die level. The techniques applied at that level are liquid crystal, optical beam-induced current (OBIC), photo emission microscopy 9PEM) and focused ion beam (FIB) to narrow down the failing area.