The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current

摘要

The low-frequency electrical noise, voltage-current (V-I) and electrical derivative characteristics of 980 nm InG- aAsP/InGaAs/GaAlAs high power double quantum well (DQW) lasers are measured at different conditions. The correlation between the low-frequency electrical noise and surface non-radiative current of devices is discussed. The results indicate that the low-frequency electrical noise of 980 nm high power DQW lasers is mainly 1/f noise and has good relation with the devices surface current at low injection.