Precise SPICE macromodel applied to high-voltage power MOSFET

摘要

A macromodel for precise SPICE simulations of high-voltage power MOSFET is presented. The macromodel takes into account basic features of these devices a higher value of the resistance between channel and drain and lower current level though the body diode compared to low-voltage power MOSFET. It also considers that high-voltage power MOSFET work mostly in saturation regime. All required parameters are extracted from direct electrical mea- surements. Simulations using this and previous macromodels are compared with experimental DC and AC charac- teristics to demonstrate a much better correspondence with experiment of the macromodel presented.