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Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

机译:TEM在nMOSFET的超薄栅极氧化物中恒流应力和恒压应力击穿失效机理的相关性

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摘要

Gate oxide breakdowns in narrow nMOSFETs induced by highly accelerated constant current stress in inversion mode were physically analyzed using high resolution transmission electron microscopy. The physical analysis results show that "dielectric-breakdown-induced-epitaxy"-like microstructures and Si-bumps were found on the cathode side for various levels of gate oxide breakdown hardness. The results further support that similar failure mechanisms in constant-voltage-stress gate oxide breakdowns are responsible for the breakdowns found in constant-current-stress ultrathin gate dielectrics.
机译:使用高分辨率透射电子显微镜对倒置模式下由高度加速的恒定电流应力引起的窄nMOSFET中的栅极氧化物击穿进行了物理分析。物理分析结果表明,对于各种水平的栅氧化层击穿硬度,在阴极侧都发现了类似“介电击穿引起的外延”的微观结构和硅凸点。结果进一步证明,恒压应力栅极氧化物击穿中的类似故障机制是恒流应力超薄栅极电介质中击穿的原因。

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