Advanced Local Lifetime Control for Higher Reliability of Power Devices

摘要

The decoration of radiation defects resulting from 10 MeV He irradiation by Pt diffusing from PtSi anode contact is used to locally decrease the carrier lifetime in 2.5 kV/100A diode. Comparison with He irradiated diodes with Al contacts shows lower leakage current and forward voltage drop in the PtSi diodes. The maximal reduction of the stored charge in the PtSi devices (up to 40% of the untreated device) is limited by the solid solubility of Pt_s~((-/0)) and the lower capture cross-section of Pt acceptor and corresponds to devices irradiated by He at dose 3x10~(10) cm~(-2).