New insights into the change of voltage acceleration and temperature activation of oxide breakdown

摘要

A large database of time-dependent dielectric breakdown study was conducted on 50 A SiO_2 film over a wide range of temperature (125-300 ℃) and a large range of voltage stress (-4.4 to -6.8 V). Using an accurate methodology, we suppress any correlation between voltage and temperature dependence of the voltage acceleration factor and the activation energy. A possible origin of the non-Arrhenius temperature dependence is discussed and a valid window for E-model lifetime prediction is defined. This study shows the high temperature impact on the reliability projection and point at the difficulty to predict the time-to-breakdown using activation energy as an extrapolation parameter.