2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI

摘要

We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut-off frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional benefit of suppressed Kirk effect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBT is discussed in detail and a CMOS compatible process is suggested for its fabrication.